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我司常期备有FKN4002 SOT23库存，保证原装品质，假一赔万。欢迎前来洽谈合作。

 FKN4002

N-Ch 40V Fast Switching MOSFETs

Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology

BVDSS RDSON ID 40V 32mΩ 5A

The FKN4002 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN4002 meet the RoHS and Green Product requirement with full function reliability approved.

Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.1 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 100 ℃/W RθJC Thermal Resistance Junction-Case1 --- 60 ℃/W

. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKN4002 N-Ch 40V Fast Switching MOSFETs 2 Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- --- 32 m VGS=4.5V , ID=3A --- --- 45 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.5 --- mV/℃ IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 ---  Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 5.5 --- Qgs Gate-Source Charge --- 1.25 --- nC Qgd Gate-Drain Charge --- 2.5 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=1A --- 8.9 --- ns Tr Rise Time --- 2.2 --- Td(off) Turn-Off Delay Time --- 41 --- Tf Fall Time --- 2.7 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 593 --- Coss Output Capacitance --- 76 --- pF Crss Reverse Transfer Capacitance --- 56 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5 A ISM Pulsed Source Current2,4 --- --- 16 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation